Switching of current channels and new mechanism of magnetoresistance in a tunneling structure | Научно-инновационный портал СФУ

Switching of current channels and new mechanism of magnetoresistance in a tunneling structure

Тип публикации: статья из журнала

Год издания: 2009

Идентификатор DOI: 10.1134/S1063785009110054

Аннотация: We have experimentally studied the transport properties of a planar La(0.7)Sr(0.3)MnO(3) (LSMO)/Mn-depleted LSMO/MnSi tunneling structure, in which the Mn-depleted LSMO layer plays the role of a potential barrier between the conducting layers of LSMO and MnSi. The measurements were performed in geometry with the current direction parallel to the planes of interfaces in the tunneling structure. It is established that the structure exhibits a nonlinear current-voltage characteristic and possesses a positive magnetoresistance, the value of which depends on the tunneling current. It is suggested that specific features of the transport properties of this structure are related to the phenomenon of current channel switching between the conducting layers. The switching mechanism is based on the dependence of the resistance of the tunneling junction between the conducting layers on the bias voltage and the applied magnetic field.

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Издание

Журнал: TECHNICAL PHYSICS LETTERS

Выпуск журнала: Vol. 35, Is. 11

Номера страниц: 990-993

ISSN журнала: 10637850

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

Авторы

  • Volkov N.V. (Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, RussiaSiberian Fed Univ, Krasnoyarsk 660041, RussiaSiberian State Aerosp Univ, Krasnoyarsk 660041, RussiaChungbuk Natl Univ, Dept Phys, Cheongju 361763, South KoreaNatl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam)
  • Eremin E.V.
  • Tsikalov V.S.
  • Patrin G.S.
  • Kim P.D.
  • Yu Seong-Cho
  • Kim Dong-Hyun
  • Chau Nguyen

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