Contracted interlayer distance in graphene/sapphire heterostructure

Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1007/s12274-014-0640-7

Ключевые слова: graphene, sapphire, chemical vapor deposition, graphene/insulator interface, chemical vapor deposition, graphene, graphene/insulator interface, sapphire

Аннотация: Direct growth of graphene on insulators is expected to yield significant improvements in performance of graphene-based electronic and spintronic devices. In this study, we successfully reveal the atomic arrangement and electronic properties of a coherent heterostructure of single-layer graphene and alpha-Al2O3(0001). The analysis of the atomic arrangement of single-layer graphene on alpha-Al2O3(0001) revealed an apparentcontradiction. The in-plane analysis shows that single-layer graphene grows not in a single-crystalline epitaxial manner, but rather in polycrystalline form, with two strongly pronounced preferred orientations. This suggests relatively weak interfacial interactions are operative. However, we demonstrate that unusually strong physical interactions between graphene and alpha-Al2O3(0001) exist, as evidenced by the small separation between the graphene and the alpha-Al2O3(0001) surface. The interfacial interaction is shown to be dominated by the electrostatic forces involved in the graphene pi-system and the unsaturated electrons of the topmost O layer of alpha-Al2O3(0001), rather than the van der Waals interactions. Such features causes graphene hole doping and enable the graphene to slide on the alpha-Al2O3(0001) surface with only a small energy barrier despite the strong interfacial interactions.

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Издание

Журнал: NANO RESEARCH

Выпуск журнала: Vol. 8, Is. 5

Номера страниц: 1535-1545

ISSN журнала: 19980124

Место издания: BEIJING

Издатель: TSINGHUA UNIV PRESS

Авторы

  • Entani S. (Advanced Science Research Center, Japan Atomic Energy Agency)
  • Shimoyama I. (Quantum Beam Science Directorate, Japan Atomic Energy Agency)
  • Baba Y. (Quantum Beam Science Directorate, Japan Atomic Energy Agency)
  • Avramov P.V. (Siberian Federal University)
  • Ohtomo M. (Advanced Science Research Center, Japan Atomic Energy Agency)
  • Matsumoto Y. (Advanced Science Research Center, Japan Atomic Energy Agency)
  • Naramoto H. (Advanced Science Research Center, Japan Atomic Energy Agency)
  • Sorokin P.B. (National University of Science and Technology MISiS)
  • Sakai S. (Advanced Science Research Center, Japan Atomic Energy Agency)
  • Antipina L.Y. (Moscow Institute of Physics and Technology)
  • Hirao N. (Quantum Beam Science Directorate, Japan Atomic Energy Agency)

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