Synthesis and transport properties of FET based on Heusler alloy thin films formed by rapid thermal annealing

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

Год издания: 2019

Идентификатор DOI: 10.1088/1742-6596/1410/1/012017

Аннотация: In this work we show a preparation technique of Co2FeSi full-Heusler alloy thin films on silicon-on-insulator (SOI) substrates, employing rapid thermal annealing (RTA). The films of the Co2FeSi alloy were formed by a silicidation reaction, caused by RTA, between the ultrathin SOI (001) layer and the Fe/Co layers deposited on it. It is assumed that this technology is compatible with the process of formation of a half-metal source-drain in an advanced CMOS and SOI technology and will be applicable for the manufacture of a source-drain of a field-effect transistor. Schottky barrier field-effect transistors (FET) with a back-gate, based on silicon nanowires with source and drain of a Co2FeSi film, synthesized on an SOI substrate, were manufactured. The transport properties of the device were investigated. © Published under licence by IOP Publishing Ltd.

Ссылки на полный текст

Издание

Журнал: Journal of Physics: Conference Series

Выпуск журнала: Vol. 1410, Is. 1

Номера страниц: 12017

ISSN журнала: 17426588

Издатель: Institute of Physics Publishing

Авторы

  • Lukyanenko A.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Tarasov A.S. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Shanidze L.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Yakovlev I.A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Zelenov F.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Masugin A.N. (Reshetnev Siberian State University of Science and Technology, Krasnoyarsk, 660037, Russian Federation)
  • Ivanov A.B. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Baron F.A. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Volkov N.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)

Вхождение в базы данных

Информация о публикациях загружается с сайта службы поддержки публикационной активности СФУ. Сообщите, если заметили неточности.

Вы можете отметить интересные фрагменты текста, которые будут доступны по уникальной ссылке в адресной строке браузера.