Theoretical Study of Vacancies and Adatoms in White Graphene

Тип публикации: статья из журнала

Год издания: 2011

Идентификатор DOI: 10.1134/S0021364011060051

Аннотация: The stability of the B and N atomic vacancies and divacancies in an h-BN monolayer deformed by 2 and 4% along one of the axes has been investigated. It has been established that the N atomic vacancies are most stable; their concentration is insignificant and does not affect the properties of white graphene. The number of vacancies depends on the mobility of N and B atoms on the layer surface; therefore, the probability of recombination with the vacancies has been estimated. It has been revealed that the energy barrier for the migration of the B and N adatoms is about 0.23 and 1.23 eV, respectively. In view of such a low barrier for the B adatom, this type of adatoms will quite rapidly move over the surface and recombine with vacancies, in contrast to the N adatoms. Therefore, only nitrogen atom vacancies can exist in the h-BN monolayer grown by the methods, where the adatoms could possibly appear on the surface.

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Издание

Журнал: JETP LETTERS

Выпуск журнала: Vol. 93, Is. 6

Номера страниц: 335-338

ISSN журнала: 00213640

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

Авторы

  • Kuzubov A.A. (Siberian Federal University, Krasnoyarsk 660028, Russian Federation; Siberian State Technological University, Krasnoyarsk 660049, Russian Federation; Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences, Akademgorodok, Krasnoyarsk 660036, Russian Federation)
  • Serzhantova M.V. (Siberian Federal University, Krasnoyarsk 660028, Russian Federation; Siberian State Aerospace University)
  • Kozhevnikova T.A. (Siberian Federal University, Krasnoyarsk 660028, Russian Federation; Kirensky Institute of Physics, Siberian Branch,Russian Academy of Sciences)
  • Fedorov A.S. (Kirensky Institute of Physics, Siberian Branch,Russian Academy of Sciences)
  • Tomilin F.N. (Kirensky Institute of Physics, Siberian Branch,Russian Academy of Sciences)

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