Structure and physical properties of hydrogenated (Co + Al)-doped ZnO films: Comparative study with co-doped ZnO films | Научно-инновационный портал СФУ

Structure and physical properties of hydrogenated (Co + Al)-doped ZnO films: Comparative study with co-doped ZnO films

Тип публикации: статья из журнала

Год издания: 2021

Идентификатор DOI: 10.1016/j.mseb.2020.114943

Ключевые слова: (co + al)-doped zno, co-doped zno, diluted oxides, hydrogenation, room temperature ferromagnetism, thin films

Аннотация: (Co + Al)-doped ZnO films have been synthesized by the RF magnetron sputtering. Films of this composition have first been obtained in mixed atmosphere of Ar + H2. High hydrogen concentration of 20–50% has been used together with high enough substrate temperature of 450 °C. The used technological conditions affected the morphology, chemical composition, optical, electric, and magnetic properties of the films to an even more than in the case of Co-doped ZnO films synthesized under the same conditions and studied earlier. The films exhibit ferromagnetic behavior at room temperature with much greater magnetization and magneto-optical activity compared to the Co-doped films. At the same time, the hydrogenated films show an increase in electric conductivity in comparison with samples synthesized in the atmosphere of Ar + O2. The magnetic nature of the hydrogenated films has been associated with the defect-related mechanism. © 2020 Elsevier B.V.

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Издание

Журнал: Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Выпуск журнала: Vol. 264

Номера страниц: 114943

ISSN журнала: 09215107

Издатель: Elsevier Ltd

Авторы

  • Samoshkina Yulia E. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Edelman Irina S. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Chou Hsiung (Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan; Natl Univ Kaohsiung, Dept Appl Phys, Kaohsiung 81148, Taiwan)
  • Lin Hsien-Chi (Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan)
  • Dwivedi Gopeshwar D. (Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan)
  • Petrov Dmitry A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Zharkov Sergey M. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia)
  • Zeer Galina M. (Siberian Fed Univ, Krasnoyarsk 660041, Russia)
  • Molokeev Maxim S. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia)

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