Сибирский федеральный университет

Тип публикации: статья из журнала

Год издания: 1991

Аннотация: Epitaxial CdS and (Cd,Zn)S, and (Cd,Zn)S parallel-to ZnS and CdS parallel-to (Cd,Zn)S superlattices have been grown by low pressure MOVPE. Cubic and hexagonal layers were formed on (001) and (111BAR)B GaAs substrates respectively. All layers exhibited complex stacking disorders and this was attributed to the tendency of CdS to adopt the wurtzite phase. Strong anisotropy in the microstructural defect content of CdS parallel-to (Cd,Zn)S superlattices, which were almost lattice matched to (001) GaAs, was observed, whereas (Cd,Zn)S parallel-to ZnS superlattices, which have a larger mismatch, exhibited inclined planar defects on all four {111} planes.

Журнал: INSTITUTE OF PHYSICS CONFERENCE SERIES

Выпуск журнала: Is. 117

Номера страниц: 627-630

ISSN журнала: 09513248

Место издания: BRISTOL

Издатель: IOP PUBLISHING LTD

• BROWN P.D. (KRASNOYARSK STATE UNIV)
• LOGINOV Y.Y. (KRASNOYARSK STATE UNIV)
• MULLINS J.T. (KRASNOYARSK STATE UNIV)
• TAGUCHI T. (KRASNOYARSK STATE UNIV)
• DUROSE K. (KRASNOYARSK STATE UNIV)

• Web of Science Core Collection