Тип публикации: статья из журнала
Год издания: 2009
Идентификатор DOI: 10.1134/S1063776109090118
Ключевые слова: Charge-transfer excitations, D-d transitions, Ferromagnetic semiconductor, Fundamental absorption edge, High pressure, Optical absorption spectrum, Absorption, Boron, Boron compounds, Electronic properties, Electronic structure, Optical materials, Oxygen, Vanadium, Light absorption
Аннотация: The evolution of optical absorption spectra of the ferromagnetic semiconductor VBO3 under high pressures up to 70 GPa has been investigated. It has been revealed that, below the fundamental absorption edge (E (g1) = 3.02 eV), the spectra exhibit a series of bands V1 (2.87 eV), V2 (2.45 eV), V3 (1.72 eV), and V4(1.21 eV) due to the d-d transitions in the V3+ ion and charge-transfer excitations. A model of the electronic structure of the VBO3 semiconductor has been constructed. This model combines the one-electron description of the s and p states of boron and oxygen and the many-electron description of the vanadium d states.
Издание
Журнал: JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
Выпуск журнала: Vol. 109, Is. 3
Номера страниц: 455-465
ISSN журнала: 10637761
Место издания: NEW YORK
Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER
Персоны
- Kazak N.V. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
- Ovchinnikov S.G. (Siberian Federal University)
- Edel'Man I.S. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
- Rudenko V.V. (Kirensky Institute of Physics,Siberian Branch,Russian Academy of Sciences)
- Gavriliuk A.G. (Institute for High Pressure Physics,Russian Academy of Sciences)
- Lyubutin I.S. (Shubnikov Institute of Crystallography,Russian Academy of Sciences)
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