Тип публикации: статья из журнала
Год издания: 2009
Идентификатор DOI: 10.1134/S1063785009110054
Аннотация: We have experimentally studied the transport properties of a planar La(0.7)Sr(0.3)MnO(3) (LSMO)/Mn-depleted LSMO/MnSi tunneling structure, in which the Mn-depleted LSMO layer plays the role of a potential barrier between the conducting layers of LSMO and MnSi. The measurements were performed in geometry with the current direction parallel to the planes of interfaces in the tunneling structure. It is established that the structure exhibits a nonlinear current-voltage characteristic and possesses a positive magnetoresistance, the value of which depends on the tunneling current. It is suggested that specific features of the transport properties of this structure are related to the phenomenon of current channel switching between the conducting layers. The switching mechanism is based on the dependence of the resistance of the tunneling junction between the conducting layers on the bias voltage and the applied magnetic field.
Издание
Журнал: TECHNICAL PHYSICS LETTERS
Выпуск журнала: Vol. 35, Is. 11
Номера страниц: 990-993
ISSN журнала: 10637850
Место издания: NEW YORK
Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER
Персоны
- Volkov N.V. (Russian Acad Sci, LV Kirensky Phys Inst, Siberian Branch, Krasnoyarsk 660036, RussiaSiberian Fed Univ, Krasnoyarsk 660041, RussiaSiberian State Aerosp Univ, Krasnoyarsk 660041, RussiaChungbuk Natl Univ, Dept Phys, Cheongju 361763, South KoreaNatl Univ Hanoi, Ctr Mat Sci, Hanoi, Vietnam)
- Eremin E.V.
- Tsikalov V.S.
- Patrin G.S.
- Kim P.D.
- Yu Seong-Cho
- Kim Dong-Hyun
- Chau Nguyen
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