Сибирский федеральный университет

Тип публикации: статья из журнала

Год издания: 2022

Идентификатор DOI: 10.3390/nano12244365

Ключевые слова: manganese germanide, thin film, Mbe, ferromagnetism, sublayer

Аннотация: Mn5Ge3 epitaxial thin films previously grown mainly on Ge substrate have been synthesized on Si(111) using the co-deposition of Mn and Ge at a temperature of 390 °C. RMS roughness decreases by almost a factor of two in the transition from a completely polycrystalline to a highly ordered growth mode. This mode has been stabilized by changing the ratio of the Mn and Ge evaporation rate from the stoichiometric in the buffer layer. Highly ordered Mn5Ge3 film has two azimuthal crystallite orientations, namely Mn5Ge3 (001) [1-10] and Mn5Ge3 (001) [010] matching Si(111)[-110]. Lattice parameters derived a (7.112(1) Å) and c (5.027(1) Å) are close to the bulk values. Considering all structural data, we proposed a double buffer layer model suggesting that all layers have identical crystal structure with P6₃/mcm symmetry similar to Mn5Ge3, but orientation and level of Si concentration are different, which eliminates 8% lattice mismatch between Si and Mn5Ge3 film. Mn5Ge3 film on Si(111) demonstrates no difference in magnetic properties compared to other reported films. TC is about 300 K, which implies no significant excess of Mn or Si doping. It means that the buffer layer not only serves as a platform for the growth of the relaxed Mn5Ge3 film, but is also a good diffusion barrier.

Журнал: Nanomaterials

Выпуск журнала: Т.12, №24

Номера страниц: 4365

ISSN журнала: 20794991

Издатель: MDPI AG

• Yakovlev Ivan (Kirensky Institute of Physics, Federal Research Center KSC SB RAS)
• Tarasov Ivan (Kirensky Institute of Physics, Federal Research Center KSC SB RAS)
• Lukyanenko Anna (Institute of Engineering Physics and Radio Electronics, Siberian Federal University)
• Rautskii Mikhail (Kirensky Institute of Physics, Federal Research Center KSC SB RAS)
• Solovyov Leonid (Institute of Chemistry and Chemical Technology, Federal Research Center KSC SB RAS)
• Sukhachev Alexander (Kirensky Institute of Physics, Federal Research Center KSC SB RAS)
• Volochaev Mikhail (Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences)
• Efimov Dmitriy (REC «Functional Nanomaterials», Immanuel Kant Baltic Federal University)
• Goikhman Aleksandr (REC «Functional Nanomaterials», Immanuel Kant Baltic Federal University)
• Bondarev Ilya (Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences)
• Varnakov Sergey (Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences)
• Ovchinnikov Sergei (Institute of Engineering Physics and Radio Electronics, Siberian Federal University)
• Volkov Nikita (Kirensky Institute of Physics, Federal Research Center KSC SB RAS)
• Tarasov Anton (Institute of Engineering Physics and Radio Electronics, Siberian Federal University)

• Ядро РИНЦ (eLIBRARY.RU)