Сибирский федеральный университет

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2021

Год издания: 2021

Идентификатор DOI: 10.1109/APEIE52976.2021.9647598

Ключевые слова: band-pass waveguide filter, glonass, slotted-waveguide membrane

Аннотация: In this article the compact band-pass filters constructions with low losses for L1 and L2 GLONASS frequency bands are presented. The developed filters are based on rectangular waveguide with resonance waveguide-slot membranes. The frequency characteristics of the researched filters are presented. The insertion losses of the filter for L1-band (1.593-1.61 GHz) is no more than 0.576 dB, the reflection coefficient level doesn't exceed-19.3dB. The insertion losses of the filter for L2-band (1.237-1.254 GHz) is no more than 1.073 dB, the reflection coefficient level doesn't exceed 19.4dB. The developed filters behavior in frequency band 1-5 GHz was considered. The filter for L1 band has wide sideband, it is from 3.57 GHz to 4.96 GHz with center frequency 4.27GHz. A filter band-pass flatness is 0.446 dB. The filter for L2 band has some narrow sidebands. The developed filters based on waveguide with waveguide-slot membranes have low losses in operating bands, small size, production manufacturability and can be widely used in GLONASS/GPS navigation systems. © 2021 IEEE.

Журнал: Proceedings of the 2021 15th International Scientific-Technical Conference on Actual Problems of Electronic Instrument Engineering, APEIE 2021

Номера страниц: 264-267

Издатель: Institute of Electrical and Electronics Engineers Inc.

• Ogorodnikov D.K. (Siberian Federal University, Institute of Engineering Physic and Radioelectronics, Krasnoyarsk, Russian Federation)
• Kharitonova N.F. (Joint-Stock Company 'Scientific-Production Enterprise Radio Communication', Krasnoyarsk, Russian Federation)
• Litinskaya Y.A. (Siberian Federal University, Institute of Engineering Physic and Radioelectronics, Krasnoyarsk, Russian Federation)
• Salomatov Y.P. (Siberian Federal University, Institute of Engineering Physic and Radioelectronics, Krasnoyarsk, Russian Federation)

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