Тип публикации: статья из журнала
Год издания: 2015
Идентификатор DOI: 10.1134/S1063782615040211
Аннотация: The electroluminescence efficiency of silicon light-emitting diode structures with several layers of ?-FeSi<inf>2</inf> nanocrystallites embedded in the p-n junction is investigated. The nanocrystallites were formed by either solid-phase epitaxy or a combination of reactive and solid-phase epitaxy. For the structures in which the nanocrystallites were formed by the combined method, electroluminescence is observed only at low temperatures (below 70K). This is indicative of a high concentration of defects acting as nonradiative-recombination centers. For the structures with nanocrystallites formed by solid-phase epitaxy, intense electroluminescence is observed up to room temperature. The dependence of the electroluminescence intensity on the size of the nanocrystallites is studied. © 2015, Pleiades Publishing, Ltd.
Издание
Журнал: Semiconductors
Выпуск журнала: Vol. 49, Is. 4
Номера страниц: 508-512
Персоны
- Shamirzaev T.S. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Ural Federal University, Yekaterinburg, Russian Federation)
- Galkin N.G. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation, Far Eastern Federal University, Vladivostok, Russian Federation)
- Chusovitin E.A. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation)
- Goroshko D.L. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation, Far Eastern Federal University, Vladivostok, Russian Federation)
- Shevlyagin A.V. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation)
- Gutakovski A.K. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation, Novosibirsk State University, Novosibirsk, Russian Federation)
- Saranin A.A. (Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, Vladivostok, Russian Federation, Far Eastern Federal University, Vladivostok, Russian Federation)
- Latyshev A.V. (Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russian Federation)
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