Тип публикации: статья из журнала
Год издания: 2019
Идентификатор DOI: 10.1002/adom.201900139
Ключевые слова: band structure, Cs 2 SnBr 6, Cs 2 SnCl 6, lead-free perovskite derivatives, narrowband photodetection
Аннотация: Lead-free and stable Sn halide perovskites demonstrate tremendous potential in the field of optoelectronic devices. Here, the structure and optical properties of the “defect” perovskites Cs 2 SnCl 6? x Br x are reported, as well as their use as photodetec
Издание
Журнал: Advanced Optical Materials
Номера страниц: 1900139
ISSN журнала: 21951071
Издатель: Wiley-VCH Verlag
Персоны
- Zhou J. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
- Luo J. (Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China)
- Rong X. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and )
- Wei P. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
- Molokeev M.S. (Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Department of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 66)
- Huang Y. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and)
- Zhao J. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
- Liu Q. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
- Zhang X. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China)
- Tang J. (Sargent Joint Research Center, Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China)
- Xia Z. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China, State Key Laboratory of Luminescent Materials and D)
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