Сибирский федеральный университет

Тип публикации: статья из журнала

Год издания: 2015

Идентификатор DOI: 10.1134/S106377101503015X

Ключевые слова: microwaves, multifrequency acoustic resonator, synthetic diamond, aluminum nitride, bulk acoustic wave, piezoelectric layered structure, form factor, Q factor, microwave attenuation, Acoustic resonators, Aluminum, Diamonds, Microwave acoustics, Microwave devices, Mobile telecommunication systems, Nitrides, Piezoelectricity, Q factor measurement, Single crystals, Synthetic diamonds, Bulk acoustic waves, Form factors, Layered Structures, Multifrequency acoustics, Q-factors, Microwave resonators

Аннотация: The Me1/AlN/Me2/(100) diamond structure has been theoretically analyzed and experimentally investigated in the range 0.5-10 GHz using high-overtone bulk acoustic resonators with different electrodes topologies based on the Al/AlN/Mo/(100) diamond structure. The maximum quality parameter Q x f a parts per thousand 10(14) Hz was obtained at f = 9.5 GHz. The layered structure has been analyzed using the developed HBAR software v. 2.3. It is demonstrated that the features in the frequency dependences of the parameters of such resonators are related to the behavior of a loaded thin-film piezoelectric transducer. The calculation results are in good agreement with the experiment. The frequency dependences of the equivalent parameters of the resonators have been calculated. It is shown that the synthetic type IIa diamond single crystal in combination with aluminum nitride is promising for implementation of high-Q acoustoelectronic microwave devices.

Журнал: ACOUSTICAL PHYSICS

Выпуск журнала: Vol. 61, Is. 4

Номера страниц: 422-433

ISSN журнала: 10637710

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

• Sorokin B.P. (Moscow Institute of Physics and Technology)
• Kvashnin G.M. (Technological Institute for Superhard and Novel Carbon Materials)
• Telichko A.V. (Moscow Institute of Physics and Technology)
• Gordeev G.I. (Moscow Institute of Physics and Technology)
• Blank V.D. (Moscow Institute of Physics and Technology)
• Burkov S.I. (Siberian Federal University)

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