Тип публикации: статья из журнала
Год издания: 1995
Ключевые слова: Electron beams, Fermi level, Interfaces (materials), Irradiation, Point defects, Semiconductor doping, Transmission electron microscopy, Zinc sulfide, Electron beam irradiation, Semiconducting cadmium telluride, Semiconducting zinc sulfide, Semiconducting cadmium compounds
Аннотация: Analysis of the decomposition products of 400KeV electron beam irradiated undoped, Cu-doped and In-doped CdTe demonstrates how dopant species influence the processes of secondary defect formation. The tendency for initial formation of cadmium oxides suggests preferential anion removal leading to accelerated oxidation. Electron beam irradiation of ZnS acts to remove extrinsic dislocation loops residual from argon ion milling, in advance of void formation. The migration of point defect clusters within electron beam irradiated ZnS and the evolution of electron beam induced damage in the presence of defects and interfaces are described.
Журнал: Proceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) (23 July 1995 through 28 July 1995, Sendai, Jpn
Выпуск журнала: Vol. 196-201, Is. pt 3
Номера страниц: 1461-1466