Тип публикации: статья из журнала
Год издания: 2019
Идентификатор DOI: 10.1002/adom.201801435
Ключевые слова: band gap engineering, halide double perovskites, Mn 2+ doping
Аннотация: The halide double perovskite family represented by A 2 (B + ,B 3+ )X 6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill the emerging applications in the optoelectronic
Издание
Журнал: Advanced Optical Materials
Номера страниц: 1801435
ISSN журнала: 21951071
Издатель: Wiley-VCH Verlag
Персоны
- Zhou J. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
- Rong X. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and )
- Zhang P. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China)
- Molokeev M.S. (Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Department of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 66)
- Wei P. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
- Liu Q. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
- Zhang X. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China)
- Xia Z. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China, State Key Laboratory of Luminescent Materials and D)
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