Manipulation of Bi 3+ /In 3+ Transmutation and Mn 2+ -Doping Effect on the Structure and Optical Properties of Double Perovskite Cs 2 NaBi 1- x In x Cl 6 | Научно-инновационный портал СФУ

Manipulation of Bi 3+ /In 3+ Transmutation and Mn 2+ -Doping Effect on the Structure and Optical Properties of Double Perovskite Cs 2 NaBi 1- x In x Cl 6

Тип публикации: статья из журнала

Год издания: 2019

Идентификатор DOI: 10.1002/adom.201801435

Ключевые слова: band gap engineering, halide double perovskites, Mn 2+ doping

Аннотация: The halide double perovskite family represented by A 2 (B + ,B 3+ )X 6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill the emerging applications in the optoelectronic The halide double perovskite family represented by A 2 (B + ,B 3+ )X 6 can overcome the lead toxicity and enable generally large band gap engineering via B/B sites' transmutation or exotic dopants to fulfill the emerging applications in the optoelectronic

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Издание

Журнал: Advanced Optical Materials

Номера страниц: 1801435

ISSN журнала: 21951071

Издатель: Wiley-VCH Verlag

Авторы

  • Zhou J. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
  • Rong X. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and )
  • Zhang P. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China)
  • Molokeev M.S. (Laboratory of Crystal Physics, Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Department of Engineering Physics and Radioelectronics, Siberian Federal University, Krasnoyarsk, 66)
  • Wei P. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
  • Liu Q. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China)
  • Zhang X. (Shenzhen Key Laboratory of Flexible Memory Materials and Devices, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China)
  • Xia Z. (The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, China, State Key Laboratory of Luminescent Materials and D)

Вхождение в базы данных

  • Scopus (цитирований 28)

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