Сибирский федеральный университет

Тип публикации: статья из журнала

Год издания: 1991

Аннотация: Cubic CdS:CdxZn1-xS strained layer superlattices with x in the region of 0.3 have been grown on GaAs by low pressure metal organic vapour phase epitaxy (MOVPE) and characterised by X-ray diffraction, photoluminesence and optical absorption measurements. Close lattice matching to the GaAs substrates has been achieved and, for short period samples, blue shifted excitonic emission and energy gaps have been observed. It may be, however, that extremely short periods, in the region of a few tens of Å, are necessary in order to obtain acceptable optical quality in this system.

Журнал: Japanese Journal of Applied Physics

Выпуск журнала: Т. 30, №11A Part 2

Номера страниц: 1853-1856

ISSN журнала: 00214922

Издатель: Institute of Pure and Applied Physics

• Mullins J.T.
• Taguchi T.
• Brown P.D.
• Loginov Y.Y. (Siberian Federal University)
• Durose K.

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