Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций
Конференция: International Russian-Chinese Symposium on Advanced Materials and Processes
Год издания: 2019
Идентификатор DOI: 10.1088/1742-6596/1347/1/012006
Аннотация: The present work is devoted to magnetic transport in Fe/SiO2/p-Si, Mn/SiO2/p-Si and Fe3Si/p-Si hybrid structure. For Mn/SiO2/p-Si diode extremely large values of magnetoresistance were observed (105 % for AC and 107 % for DC) which is explained by impact ionization process that can be suppressed by the magnetic field. Lateral photovoltaic effect in Fe/SiO2/p-Si have also shown a strong dependence on the magnetic field in low-temperature region (the relative change of photovoltage exceeded 103 %). In Fe3Si/p-Si spin accumulation was found via 3-terminal Hanle measurements. We believe that the magnetic field affects electric transport through Lorentz force and through the interface states which are localized at the insulator/semiconductor or metal/semiconductor interfaces. Such states play a decisive role in magnetotrasnport as their energy can be controlled by a magnetic field. In Fe3Si/p-Si they also participate in spin-dependent tunneling, causing spin injection from the Fe3Si film into the silicon. © Published under licence by IOP Publishing Ltd.
Издание
Журнал: Journal of Physics: Conference Series
Выпуск журнала: Vol. 1347, Is. 1
Номера страниц: 12006
ISSN журнала: 17426588
Издатель: Institute of Physics Publishing
Персоны
- Volkov N.V. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
- Bondarev I.A. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
- Tarasov A.S. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
- Rautskii M.V. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
- Lukyanenko A.V. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
- Smolyakov D.A. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
- Varnakov S.N. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
- Ovchinnikov S.G. (Kirensky Institute of Physics of the Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
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