Сибирский федеральный университет

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: International Conference on Defects in Semiconductors (ICDS-18); SENDAI, JAPAN; SENDAI, JAPAN

Год издания: 1995

Ключевые слова: transmission electron microscopy; point defects; CdTe; ZnS

Аннотация: Analysis of the decomposition products of 400keV electron beam irradiated undoped, Cu-doped and In-doped CdTe demonstrates how dopant species influence the processes of secondary defect formation. The tendency for initial formation of cadmium oxides suggests preferential anion removal leading to accelerated oxidation. Electron beam irradiation of ZnS acts to remove extrinsic dislocation loops residual from argon ion milling, in advance of void formation. The migration of point defect clusters within electron beam irradiated ZnS and the evolution of electron beam induced damage in the presence of defects and interfaces are described.

Журнал: ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4

Выпуск журнала: Vol. 196-

Номера страниц: 1461-1465

ISSN журнала: 02555476

Место издания: ZURICH-UETIKON

Издатель: TRANSTEC PUBLICATIONS LTD

• Loginov Y.Y. (KRASNOYARSK STATE UNIV)
• Brown P.D. (KRASNOYARSK STATE UNIV)
• Humphreys C.J. (KRASNOYARSK STATE UNIV)

• Web of Science Core Collection