High moisture resistance of an efficient Mn4+-activated red phosphor Cs2NbOF5:Mn4+ for WLEDs | Научно-инновационный портал СФУ

High moisture resistance of an efficient Mn4+-activated red phosphor Cs2NbOF5:Mn4+ for WLEDs

Тип публикации: статья из журнала

Год издания: 2021

Идентификатор DOI: 10.1016/j.cej.2020.126678

Ключевые слова: light-emitting diodes, mn4+, moisture resistance, photoluminescence, self-protection

Аннотация: Mn4+-activated fluoride red phosphors, the most important red phosphors for warm white light emitting diodes (LEDs), usually suffer from inherent poor moisture resistance which is a major obstacle to their long-lasting outdoor applications in a high humidity environment. Surface modification of phosphors by coating with either organic or inorganic shells is an effective way to improve waterproof stability. However, the coating procedure usually has a negative impact on the luminous efficacy due to the increased passivation shell thickness. In this work, Mn4+-activated oxyfluoroniobate (Cs2NbOF5), a highly efficient phosphor with internal quantum efficiency of ca. 82%, has been successfully synthesized and it is interesting to note that Cs2NbOF5:Mn4+ can exhibit remarkably improved waterproof stability even without surface coating compared to well-accepted commercial fluoride red-emitting phosphor, K2SiF6:Mn4+. The results obtained indicate that Nb5+ ions inside red phosphor play a crucial role in improving the water-resistant performance of Mn4+, which provides a new concept for overcoming the downside of their waterproof in humid conditions and maintaining the luminescence efficiency. In the final phase white LEDs with a high luminous efficacy of 174 lm/W (higher than commercial fluoride red phosphors), low correlated color temperature (3164 K) and high color rendering index (Ra = 90 and R9 = 85) have been fabricated using Cs2NbOF5:Mn4+. © 2020 Elsevier B.V.

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Издание

Журнал: Chemical Engineering Journal

Выпуск журнала: Vol. 405

Номера страниц: 126678

ISSN журнала: 13858947

Персоны

  • Zhou Jianbang (Sun Yat Sen Univ, Sch Marine Sci, Sch Chem, Guangzhou 510275, Peoples R China)
  • Chen Yingyuan (Sun Yat Sen Univ, Sch Marine Sci, Sch Chem, Guangzhou 510275, Peoples R China)
  • Jiang Chunyan (Sun Yat Sen Univ, Sch Marine Sci, Sch Chem, Guangzhou 510275, Peoples R China)
  • Milicevic Bojana (Sun Yat Sen Univ, Sch Marine Sci, Sch Chem, Guangzhou 510275, Peoples R China)
  • Molokeev Maxim S. (RAS, Fed Res Ctr KSC SB, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia; Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia)
  • Brik Mikhail G. (Chongqing Univ Posts & Telecommun, Coll Sci, Chongqing 400065, Peoples R China; Univ Tartu, Inst Phys, W Ostwald Str 1, EE-50411 Tartu, Estonia; Jan Dlugosz Univ, Inst Phys, Armii Krajowej 13-15, PL-42200 Czestochowa, Poland)
  • Bobrikov Ivan A. (Joint Inst Nucl Res, Frank Lab Neutron Phys, Dubna 141980, Russia)
  • Yan Jing (Guangdong Inst Semicond Ind Technol, Guangzhou 510650, Peoples R China)
  • Li Junhao (Sun Yat Sen Univ, Sch Marine Sci, Sch Chem, Guangzhou 510275, Peoples R China)
  • Wu Mingmei (Sun Yat Sen Univ, Sch Marine Sci, Sch Chem, Guangzhou 510275, Peoples R China)

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