Technique for Fabricating Ferromagnetic/Silicon Active Devices and Their Transport Properties | Научно-инновационный портал СФУ

Technique for Fabricating Ferromagnetic/Silicon Active Devices and Their Transport Properties

Тип публикации: статья из журнала

Год издания: 2021

Идентификатор DOI: 10.1134/S1027451021010109

Ключевые слова: electron lithography, electron transport, nanowire, reactive ion etching, schottky barrier, silicon on insulator, transistor

Аннотация: Abstract: Semiconductor nanowires are unique materials for studying nanoscale phenomena; the possibility of forming silicon nanowires on bulk silicon-on-insulator substrates in a top-down process ensures complete incorporation of this technology into integrated electronic systems. In addition, the use of ferromagnetic contacts in combination with the high quality of ferromagnetic–semiconductor interfaces open up prospects for the use of such structures in spintronics devices, in particular, spin transistors. A simple approach is proposed to create semiconductor nanowire-based active devices, specifically, bottom-gate Schottky-barrier field-effect transistors with a metal (Fe) source and drain synthesized on a silicon-on-insulator substrate and the transport characteristics of the designed transistors are investigated. © 2021, Pleiades Publishing, Ltd.

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Издание

Журнал: Journal of Surface Investigation

Выпуск журнала: Vol. 15, Is. 1

Номера страниц: 65-69

ISSN журнала: 10274510

Издатель: Pleiades journals

Авторы

  • Lukyanenko A.V. (Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Tarasov A.S. (Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Shanidze L.V. (Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Volochaev M.N. (Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
  • Zelenov F.V. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Yakovlev I.A. (Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation)
  • Bondarev I.A. (Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Volkov N.V. (Kirensky Institute of Physics, Krasnoyarsk Scientific Center, Siberian Branch, Russian Academy of Sciences, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)

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