Тип публикации: статья из журнала
Год издания: 2015
Идентификатор DOI: 10.1016/j.physb.2015.08.054
Ключевые слова: Indium oxide, Fe-In2O3 thin films, Weak localization, Disordered semiconductors, Fe-In<inf>2</inf>O<inf>3</inf> thin films, Carrier concentration, Hall mobility, Magnetoresistance, Nanocomposite films, Nanocomposites, Oxide films, Hall carrier concentrations, Magneto transport properties, Nanocomposite thin films, Negative magneto-resistance, Thermite reaction, Thin films
Аннотация: A ferromagnetic Fe-In2O3 nanocomposite thin film has been synthesized by the thermite reaction Fe2O3 + In -> Fe-In2O3. Measurements of the Hall carrier concentration, Hall mobility and magnetoresistance have been conducted at room temperature. The nanocomposite Fe-In2O3 thin film had n=1.94.10(20) cm(-3), mu = 6.45 cm(2)/Vs and negative magnetoresistance. The magnetoresistance for 8.8 kOe was similar to -0.22%.The negative magnetoresistance was well described by the weak localization and model proposed by Khosla and Fischer. (C) 2015 Elsevier B.V. All rights reserved.
Издание
Журнал: PHYSICA B-CONDENSED MATTER
Выпуск журнала: Vol. 478
Номера страниц: 135-137
ISSN журнала: 09214526
Место издания: AMSTERDAM
Издатель: ELSEVIER SCIENCE BV
Персоны
- Tambasov I.A. (Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences)
- Myagkov V.G. (Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences)
- Bykova L.E. (Kirensky Institute of Physics, Siberian Branch, Russian Academy of Sciences)
- Zhigalov V.S. (Reshetnev Siberian State Aerospace University)
- Matsynin A.A. (Siberian Federal University)
- Gornakov K.O. (Reshetnev Siberian State Aerospace University)
- Yozhikova E.V. (Reshetnev Siberian State Aerospace University)
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