Magnetic-field-driven electron transport in SOI back-gate device

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: 6th International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures, SPbOPEN 2019

Год издания: 2019

Идентификатор DOI: 10.1088/1742-6596/1410/1/012204

Аннотация: In this work, we studied the electronic transport properties of silicon nanowire field-effect transistors with a back gate. A nontrivial magnetic field influence on the drain current at low temperature (10 K) was found. The strongest effect was observed in the majority carrier accumulation mode. In this mode magnetic field of 0.5 T increases current through the device by more than an order of magnitude. The paper describes the possible mechanisms of the magnetic field influence on the electronic transport characteristics of the structures. © Published under licence by IOP Publishing Ltd.

Ссылки на полный текст

Издание

Журнал: Journal of Physics: Conference Series

Выпуск журнала: Vol. 1410, Is. 1

Номера страниц: 12204

ISSN журнала: 17426588

Издатель: Institute of Physics Publishing

Авторы

  • Shanidze L.V. (Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Tarasov A.S. (Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Lukyanenko A.V. (Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Rautskii M.V. (Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Yakovlev I.A. (Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Zelenov F.N. (Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Baron F.A. (Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)
  • Volkov N.V. (Kirensky Institute of Physics, Federal Research Center, KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)

Вхождение в базы данных

Информация о публикациях загружается с сайта службы поддержки публикационной активности СФУ. Сообщите, если заметили неточности.

Вы можете отметить интересные фрагменты текста, которые будут доступны по уникальной ссылке в адресной строке браузера.