Сибирский федеральный университет

Тип публикации: статья из журнала

Год издания: 2014

Идентификатор DOI: 10.1063/1.4863324

Ключевые слова: Electronic structure, Monolayers, Nickel, Spin polarization, Barrier material, De-excitations, Hexagonal boron nitride, Hexagonal boron nitride (h-BN), Nitrogen atom, Partial filling, Spin-polarized, Surface sensitivity, Boron nitride

Аннотация: Hexagonal boron nitride (h-BN) is a promising barrier material for graphene spintronics. In this Letter, spin-polarized metastable de-excitation spectroscopy (SPMDS) is employed to study the spin-dependent electronic structure of monolayer h-BN/Ni(111). The extreme surface sensitivity of SPMDS enables us to elucidate a partial filling of the in-gap states of h-BN without any superposition of Ni 3d signals. The in-gap states are shown to have a considerable spin polarization parallel to the majority spin of Ni. The positive spin polarization is attributed to the pi-d hybridization and the effective spin transfer to the nitrogen atoms at the h-BN/Ni(111) interface. (C) 2014 AIP Publishing LLC.

Журнал: APPLIED PHYSICS LETTERS

Выпуск журнала: Vol. 104, Is. 5

ISSN журнала: 00036951

Место издания: MELVILLE

Издатель: AMER INST PHYSICS

• Ohtomo M. (Advanced Science Research Center, Japan Atomic Energy Agency)
• Avramov P.V. (Siberian Federal University)
• Entani S. (Advanced Science Research Center, Japan Atomic Energy Agency)
• Matsumoto Y. (Advanced Science Research Center, Japan Atomic Energy Agency)
• Naramoto H. (Advanced Science Research Center, Japan Atomic Energy Agency)
• Sakai S. (Advanced Science Research Center, Japan Atomic Energy Agency)
• Yamauchi Y. (National Institute for Materials Science)
• Kuzubov A.A. (Siberian Federal University)
• Eliseeva N.S. (Siberian Federal University)

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