Тип публикации: статья из журнала
Год издания: 2013
Идентификатор DOI: 10.1088/0953-8984/25/8/085503
Ключевые слова: Ab initio method, Electronic parameters, Optical-quality crystals, Photoemission spectra, Powder samples, X ray photoemission spectroscopy, XPS measurements, Electronic structure, Photoelectron spectroscopy, Band structure, bismuth, oxide, strontium, article, chemical model, chemical structure, chemistry, computer simulation, electric conductivity, electronics, X ray photoelectron spectroscopy, Models, Chemical, Molecular Structure, Oxides
Аннотация: The investigation of valence band structure and electronic parameters of constituent element core levels of alpha-SrB4O7 has been carried out with x-ray photoemission spectroscopy. Optical-quality crystal alpha-SrB4O7 has been grown by the Czochralski method. Detailed photoemission spectra of the element core levels have been recorded from the powder sample under excitation by nonmonochromatic Al K alpha radiation (1486.6 eV). The band structure of alpha-SrB4O7 has been calculated by ab initio methods and compared to XPS measurements. It has been found that the band structure of alpha-SrB4O7 is weakly dependent on the Sr-related states.
Издание
Журнал: JOURNAL OF PHYSICS-CONDENSED MATTER
Выпуск журнала: Vol. 25, Is. 8
ISSN журнала: 09538984
Место издания: BRISTOL
Издатель: IOP PUBLISHING LTD
Персоны
- Atuchin V.V. (Laboratory of Optical Materials and Structures,Institute of Semiconductor Physics,SB RAS)
- Kesler V.G. (Laboratory of Physical Bases of Integrated Microelectronics,Institute of Semiconductor Physics,SB RAS)
- Zaitsev A.I. (Siberian Federal University)
- Molokeev M.S. (Laboratory of Crystal Physics,Institute of Physics,SB RAS)
- Aleksandrovsky A.S. (Laboratory of Coherent Optics,Institute of Physics,SB RAS)
- Kuzubov A.A. (Siberian Federal University)
- Ignatova N.Y. (Siberian Federal University)
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