Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices : научное издание | Научно-инновационный портал СФУ

Fabrication and DC/AC Characterization of 3-Terminal Ferromagnet/Silicon Spintronics Devices : научное издание

Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1134/S1063782618140312

Аннотация: CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expanding their functionality. The most promising is the research and development of spintronic devices, which will allow using both electron charge and spin degrees of freedom for transmission, storage and processing of information. In this work we report the fabrication process of 3-terminal (3-T) ferromagnet/silicon devices of two types. First is the planar Fe3Si/Si 3-T structure with 5 m gap between closest ferromagnetic electrodes. Second is silicon nanowire back-gate transistor with Fe film source and drain synthesized on SOI substrate. Transport and magnetotransport properties of both devices are investigated. Abstract: CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expandin Abstract: CMOS and SOI technology compatible structures and devices are currently intensively investigated by many research groups, since various effects observed in such structures can be relatively easy implemented in electronic devices thereby expandin

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Издание

Журнал: SEMICONDUCTORS

Выпуск журнала: Vol. 52, Is. 14

Номера страниц: 1875-1878

ISSN журнала: 10637826

Место издания: MOSCOW

Издатель: PLEIADES PUBLISHING INC

Авторы

  • Tarasov A.S. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk, RussiaArticle)
  • Lukyanenko A.V. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk, RussiaArticle)
  • Bondarev I.A. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk, RussiaArticle)
  • Rautskii M.V. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia)
  • Baron F.A. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia)
  • Smolyarova T.E. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk, RussiaArticle)
  • Yakovlev I.A. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia)
  • Varnakov S.N. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia)
  • Ovchinnikov S.G. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk, RussiaArticle)
  • Volkov N.V. (RAS, SB, KSC, Kirensky Inst Phys,Fed Res Ctr, Krasnoyarsk, Russia)

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