Exploring the transposition effects on the electronic and optical properties of Cs2AgSbCl6 via a combined computational-experimental approach : научное издание | Научно-инновационный портал СФУ

Exploring the transposition effects on the electronic and optical properties of Cs2AgSbCl6 via a combined computational-experimental approach : научное издание

Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1039/c7ta10062k

Аннотация: The electronic and optical properties of perovskites are related to the local structures of the compounds and define their functional applications. Herein we have prepared a double perovskite Cs2AgSbCl6, which crystallized in the cubic structure with the space group Fm-3m and the material is found to have a varied band gap associated with different body colors. The anti-site defect model was established to investigate transposition influence on the optical and electronic properties of the double-perovskite Cs2AgSbCl6, and the proposed model clearly explained the as-observed variable body color. Cs2AgSbCl6 perovskite has a high decomposition temperature and is stable upon prolonged exposure to air and moisture, which emphasize its potential in the field of photovoltaic absorbers and optoelectronic applications.

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Издание

Журнал: JOURNAL OF MATERIALS CHEMISTRY A

Выпуск журнала: Vol. 6, Is. 5

Номера страниц: 2346-2352

ISSN журнала: 20507488

Место издания: CAMBRIDGE

Издатель: ROYAL SOC CHEMISTRY

Авторы

  • Zhou Jun (Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China)
  • Rong Ximing (Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Guangdong, Peoples R China; Shenzhen Univ, Coll Optoelect Engn, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Shenzhen 518060, Peoples R China)
  • Molokeev Maxim S. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia; Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia)
  • Zhang Xiuwen (Shenzhen Univ, Coll Elect Sci & Technol, Shenzhen 518060, Guangdong, Peoples R China)
  • Xia Zhiguo (Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing Municipal Key Lab New Energy Mat & Techno, Beijing 100083, Peoples R China)

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