Room Temperature Spin Accumulation Effect in Boron Doped Si Created by Epitaxial Fe3Si/p-Si Schottky Contact

Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1134/S1027451018040171

Ключевые слова: spintronics, hybrid structures, Schottky diode, Hanle effect, spin accumulation

Аннотация: To study spin-dependent transport phenomena in Fe3Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. IaEuro'V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe3Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe3Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.

Ссылки на полный текст

Издание

Журнал: JOURNAL OF SURFACE INVESTIGATION

Выпуск журнала: Vol. 12, Is. 4

Номера страниц: 633-637

ISSN журнала: 10274510

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

Авторы

  • Tarasov A.S. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia)
  • Bondarev I.A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia)
  • Rautskii M.V. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)
  • Lukyanenko A.V. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia)
  • Tarasov I.A. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia)
  • Varnakov S.N. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian State Aerosp Univ, Krasnoyarsk 660014, Russia)
  • Ovchinnikov S.G. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Inst Engn Phys & Radio Elect, Krasnoyarsk 660041, Russia)
  • Volkov N.V. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Krasnoyarsk 660036, Russia)

Вхождение в базы данных

Информация о публикациях загружается с сайта службы поддержки публикационной активности СФУ. Сообщите, если заметили неточности.

Вы можете отметить интересные фрагменты текста, которые будут доступны по уникальной ссылке в адресной строке браузера.