Тип публикации: статья из журнала
Год издания: 2017
Идентификатор DOI: 10.1016/j.jcrysgro.2017.01.032
Ключевые слова: A1. Computer modeling, A1. Dislocation density, A2. Czochralski crystal growth, B1. Germanium, Crystal growth, Crystal growth from melt, Germanium, Heat transfer, Computer modeling, Crystal growth process, Crystallization dynamics, Dislocation densities, High purity germaniums, Knowledge and experience, Low-dislocation density, Melt/crystal interfaces, Dislocations (crystals)
Аннотация: Obtaining very high-purity germanium crystals with low dislocation density is a practically difficult problem, which requires knowledge and experience in growth processes. Dislocation density is one of the most important parameters defining the quality of germanium crystal.In this paper, we have performed experimental study of dislocation density during 4-in. germanium crystal growth using the Czochralski method and comprehensive unsteady modeling of the same crystal growth processes, taking into account global heat transfer, melt flow and melt/crystal interface shape evolution. Thermal stresses in the crystal and their relaxation with generation of dislocations within the Alexander-Haasen model have been calculated simultaneously with crystallization dynamics. Comparison to experimental data showed reasonable agreement for the temperature, interface shape and dislocation density in the crystal between calculation and experiment. © 2017 Elsevier B.V.
Журнал: Journal of Crystal Growth
Выпуск журнала: Vol. 468
Номера страниц: 443-447
ISSN журнала: 00220248
Издатель: Elsevier Science Publishing Company, Inc.