The Vis-NIR multicolor emitting phosphor Ba4Gd3Na3(PO4)6F2: Eu2+, Pr3+ for LED towards plant growth | Научно-инновационный портал СФУ

The Vis-NIR multicolor emitting phosphor Ba4Gd3Na3(PO4)6F2: Eu2+, Pr3+ for LED towards plant growth

Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1016/j.jiec.2018.05.014

Ключевые слова: Energy-transfer, LEDs, Phosphor, Plant growth

Аннотация: Photosynthesis process is the basic for plant growth, which needs energy from the light. The pigments of chlorophyll a, b and bacteriochlorophyll are responsible for the absorption of light, in which blue, red and near-infrared (NIR) light directly or indirectly promote the plant growth and enhancement of nurtiments. It is important for plant to support absorbable light, and phosphhor-converted light emitting diodes (pc-LEDs) are low-cost, energy-saving and enviromental friendly devices for plant growth. To develop a phosphor with emission covering the blue, red and NIR, a series of phosphors Ba4Gd3Na3(PO4)6F2: Eu2+, Pr3+ with blue, red and NIR multi-emitting were prepared. Their emissions not only match well with the absorption spectra of pigments in the plant, but also could be excited by near ultraviolet (n-UV) LED chip. The crystal structure of host Ba4Gd3Na3(PO4)6F2 was refined from the XRD data and three different crystallographic sites occupied by Eu2+ were determined through low temperature photoluminescence spectra. The energy transfer from Eu2+ to Pr3+ ions was also discussed in detail. Results indicated that the multi-emitting Ba4Gd3Na3(PO4)6F2: Eu2+, Pr3+ can serve as a phosphor candidate for plant growth LEDs. © 2018 The Korean Society of Industrial and Engineering Chemistry

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Издание

Журнал: Journal of Industrial and Engineering Chemistry

ISSN журнала: 1226086X

Издатель: Korean Society of Industrial Engineering Chemistry

Авторы

  • Zhou Ziwei (Northwest Univ, Natl Photoelect Technol & Funct Mat & Applicat Sc, Inst Photon & Photon Technol, Natl Key Lab Photoelect Technol & Funct Mat Cultu, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Zhang Niumiao (Northwest Univ, Natl Photoelect Technol & Funct Mat & Applicat Sc, Inst Photon & Photon Technol, Natl Key Lab Photoelect Technol & Funct Mat Cultu, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Chen Jiayu (Northwest Univ, Natl Photoelect Technol & Funct Mat & Applicat Sc, Inst Photon & Photon Technol, Natl Key Lab Photoelect Technol & Funct Mat Cultu, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)
  • Zhou Xianju (Chongqing Univ Posts & Telecommun, Sch Sci, Chongqing 400065, Peoples R China)
  • Molokeev Maxim S. (Fed Res Ctr KSC SB RAS, Kirensky Inst Phys, Lab Crystal Phys, Krasnoyarsk 660036, Russia; Siberian Fed Univ, Krasnoyarsk 660041, Russia; Far Eastern State Transport Univ, Dept Phys, Khabarovsk 680021, Russia)
  • Guo Chongfeng (Northwest Univ, Natl Photoelect Technol & Funct Mat & Applicat Sc, Inst Photon & Photon Technol, Natl Key Lab Photoelect Technol & Funct Mat Cultu, Xian 710069, Shaanxi, Peoples R China; Northwest Univ, Dept Phys, Xian 710069, Shaanxi, Peoples R China)

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