Investigation into factors, affecting the control of microstrip transfer line characteristics on a semicondactor substrate | Научно-инновационный портал СФУ

Investigation into factors, affecting the control of microstrip transfer line characteristics on a semicondactor substrate

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Год издания: 2011

Ключевые слова: Active Layer, Amplitude frequency response, Comparison result, Constant propagation, Electrophysical parameters, Frequency characteristic, GHz frequencies, Microstripes, Phase frequency, Semiconductor substrate, Transfer lines, Transmission coefficients, Computer simulation, Gallium arsenide, Power transmission, Frequency response

Аннотация: The results from numerical simulation of the frequency characteristics of the controlled microstrip line on the semiconductor substrate (MLSS) over the 5 to 7 GHz frequency range are presented. This line contains the gallium arsenide or a silicon active layer which changes the electrophysical parameters are reason of control power transmission coefficient through section of MLSS. In this communication the comparison results of numerical simulations of phase-frequency and amplitude-frequency response curves for the power transmission coefficient through the section of MLSS with frequency responses curves of complex constant propagation are presented. We note the disparity between the frequency of phase-frequency and transmission coefficient trends. © 2011 CRIMICO (Crimean Microwave Conference).

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Издание

Журнал: CriMiCo 2011 - 2011 21st International Crimean Conference: Microwave and Telecommunication Technology, Conference Proceedings

Номера страниц: 255-256

Авторы

  • Kopylov A.F. (Siberian Federal University, Svobodny str. 76, Krasnoyarsk City, 660041, Russian Federation)
  • Kopylova N.A. (Siberian Federal University, Svobodny str. 76, Krasnoyarsk City, 660041, Russian Federation)

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