Quantum dots embedded into silicon nanowires effectively partition electron confinement

Тип публикации: статья из журнала

Год издания: 2008

Идентификатор DOI: 10.1063/1.2973464

Ключевые слова: Electric currents, Electric wire, Electronic states, Electronic structure, Nanostructured materials, Nanostructures, Nanowires, Nonmetals, Optical waveguides, Plasma confinement, Quantum confinement, Quantum electronics, Semiconducting silicon compounds, Silicon, ) electronic state, Band gaps, Electron confinements, Electronic-structure calculations, Embedded structures, Quantum confinement effect, Quantum dots, Semi-empirical methods, Silicon nanowires, Silicon quantum dots, Semiconductor quantum dots

Аннотация: Motivated by the experimental discovery of branched silicon nanowires, we performed theoretical electronic structure calculations of icosahedral silicon quantum dots embedded into pentagonal silicon nanowires. Using the semiempirical method, we studied the quantum confinement effect in the fully optimized embedded structures. It was found that (a) the band gaps of the embedded structures are closely related to the linear sizes of the longest constituting part rather than to the total linear dimension and (b) the discovered atypical quantum confinement with a plateau and a maximum can be attributed to the substantial interactions of near Fermi level electronic states of the quantum dots and nanowire segments. (c) 2008 American Institute of Physics.

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Выпуск журнала: Vol. 104, Is. 5

ISSN журнала: 00218979

Место издания: MELVILLE



  • Avramov P.V. (Fukui Institute for Fundamental Chemistry,Kyoto University)
  • Fedorov D.G. (Research Institute for Computational Science,National Institute of Advanced Industrial Science and Technology (AIST))
  • Sorokin Pavel B. (LV Kirensky Inst Phys SB RAS; Siberian Fed Univ; RAS, NM Emanuel Inst Biochem Phys)
  • Chernozatonskii L.A. (N.M. Emanuel Institute of Biochemical Physics,RAS)
  • Ovchinnikov Sergei G. (LV Kirensky Inst Phys SB RAS; Siberian Fed Univ)

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