Тип публикации: статья из журнала
Год издания: 2014
Идентификатор DOI: 10.1063/1.4881715
Ключевые слова: Magnetic fields, MIS devices, Schottky barrier diodes, Semiconductor diodes, Silicon, Applied magnetic fields, Charging dynamics, Energy structures, Giant magneto impedance effect, Low frequency regions, Metal insulator semiconductor structures, Metal-insulator-semiconductor diodes, Schottky barriers, Interface states
Аннотация: We demonstrate that ferromagnetic metal/insulator/semiconductor hybrid structures represent a class of materials with the giant magnetoimpedance effect. In a metal-insulator-semiconductor diode with the Schottky barrier fabricated on the basis of the Fe/SiO2/n-Si structure, a drastic change in the impedance in an applied magnetic field was found. The maximum value of this effect was observed at temperatures of 10-30 K in the frequency range of 10 Hz-1 MHz where the ac magnetoresistance and magnetoreactance ratios exceeded 300% and 600%, respectively. In the low-frequency region (
Издание
Журнал: APPLIED PHYSICS LETTERS
Выпуск журнала: Vol. 104, Is. 22
ISSN журнала: 00036951
Место издания: MELVILLE
Издатель: AMER INST PHYSICS
Персоны
- Volkov N.V. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University)
- Tarasov A.S. (Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch)
- Smolyakov D.A. (Kirensky Institute of Physics, Russian Academy of Sciences, Siberian Branch)
- Gustaitsev A.O. (Institute of Engineering Physics and Radio Electronics, Siberian Federal University)
- Balashev V.V. (School of Natural Sciences, Far Eastern Federal University)
- Korobtsov V.V. (School of Natural Sciences, Far Eastern Federal University)
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