Сибирский федеральный университет

Тип публикации: статья из журнала

Год издания: 2018

Идентификатор DOI: 10.1134/S1063782618020161

Аннотация: Homogeneous Sb-doped single crystals of Ge–Si solid solutions are grown with a silicon content of 0.2 to 0.8 at %. The optical absorption of single crystals with a resistivity of (2–3) Ω cm is studied by IR Fourier spectroscopy at a wavelength of 10.6 μm in the temperature range from 25 to 60°C. It is found that the introduction of silicon into antimony-doped germanium improves the temperature stability of the optical properties of the crystals. © 2018, Pleiades Publishing, Ltd.

Журнал: Semiconductors

Выпуск журнала: Vol. 52, Is. 2

Номера страниц: 264-267

ISSN журнала: 10637826

Издатель: Maik Nauka-Interperiodica Publishing

• Shimanskii A.F. (Siberian Federal University, Krasnoyarsk, Russian Federation)
• Pavlyuk T.O. (Germanium Joint-stock company, Krasnoyarsk, Russian Federation)
• Kopytkova S.A. (Germanium Joint-stock company, Krasnoyarsk, Russian Federation)
• Filatov R.A. (Siberian Federal University, Krasnoyarsk, Russian Federation)
• Gorodishcheva A.N. (Reshetnev Siberian State Aerospace University, Krasnoyarsk, Russian Federation)

• Scopus
• РИНЦ (eLIBRARY.RU)
• Web of Science Core Collection