Electrically induced transformations of defects in cholesteric layer with tangential-conical boundary conditions : научное издание

Тип публикации: статья из журнала

Год издания: 2020

Идентификатор DOI: 10.1038/s41598-020-61713-9

Ключевые слова: article; electric field; liquid crystal; pitch; polarization microscopy; thickness

Аннотация: Electric-field-induced changes of the orientational structures of cholesteric liquid crystal layer with the tangential-conical boundary conditions have been investigated. The samples with the ratio of the cholesteric layer thickness d to the helix pitch p equalled to 0.57 have been considered. The perpendicularly applied electric field causes a decrease of the azimuthal director angle at the substrate with the conical surface anchoring. In the cells with d = 22 μm, the defect loops having the under-twisted and over-twisted areas are formed. At the defect loop the pair of point peculiarities is observed where the 180° jump of azimuthal angle of the director occurs. Under the action of electric field the loops shrink and disappear. In the cells with d = 13 μm, the over-twisted and under-twisted defect lines are formed. Applied voltage results in the shortening of lines or/and their transformation into a defect of the third type. The director field distribution near defect lines of three types has been investigated by the polarising microscopy techniques. It has been revealed that the length ratio between the over-twisted and third-type defect lines can be controlled by the electric field. © 2020, The Author(s).

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Издание

Журнал: Scientific Reports

Выпуск журнала: Vol. 10, Is. 1

Номера страниц: 4907

ISSN журнала: 20452322

Издатель: Nature Research

Авторы

  • Krakhalev M.N. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Prishchepa O.O. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Sutormin V.S. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Bikbaev R.G. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Timofeev I.V. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation, Institute of Engineering Physics and Radio Electronics, Siberian Federal University, Krasnoyarsk, 660041, Russian Federation)
  • Zyryanov V.Y. (Kirensky Institute of Physics, Federal Research Center KSC SB RAS, Krasnoyarsk, 660036, Russian Federation)

Вхождение в базы данных

  • Scopus

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