Сибирский федеральный университет

Тип публикации: статья из журнала

Год издания: 1991

Идентификатор DOI: 10.1002/pssa.2211270108

Аннотация: The nature and density of secondary microstructural defects produced within 100 keV electron beam irradiated CdTe, ZnS, and ZnSe is shown to be independent of intensity and only dependent on total flux, while the rate of defect formation increases linearly with increasing beam intensity. The susceptibility to both ion milling and electron beam irradiation damage varies in order ZnS > ZnSe > CdTe. An estimate of the time for charge relaxation of a multiple ionised CdTe anion is (2 to 6) x 10(-14) s. The interaction of generated point defects with native dislocations leads to the production of dipole structures.

Журнал: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH

Выпуск журнала: Vol. 127, Is. 1

Номера страниц: 75-86

ISSN журнала: 00318965

Место издания: BERLIN

Издатель: AKADEMIE VERLAG GMBH

• Loginov Y.Y. (Department of Physics, Krasnoyarsk State University)
• Brown P.D.
• Thompson N.

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