Application features of MOSFET spice models in design of radio-electronic equipment

Тип публикации: доклад, тезисы доклада, статья из сборника материалов конференций

Конференция: 2017 International Siberian Conference on Control and Communications, SIBCON 2017; Astana; Astana

Год издания: 2017

Идентификатор DOI: 10.1109/SIBCON.2017.7998519

Ключевые слова: accuracy, adequacy, convergence, electronic components, matched inverter, MOSFET Spice model, transfer characteristic

Аннотация: Using the modern elements in a radio-electronic equipment requires close attention to processes as in branch of design and production of electronic components to use the last development in the field simulation of components and in the field computer-Aided design of an equipment on the basis of radio-electronic components for the purpose of support adequacy, accuracy and convergence. Possibilities of a solution simulation adequacies of a radio-electronic equipment on the basis of Spice models of electronic components as analysis result and applications of calculation equations of global model parameters are shown. On the example of use the MOSFET models of different generations the inadequacy reasons of simulation results the transfer characteristic for the matched inverter are shown. Ways for fixing inadequacy calculations through establishment of models parameter values other than values by default are offered. Values Spice directive OPTIONS for support of accuracy and stability in simulation on the basis of the used MOSFET models of different generations are offered.

Ссылки на полный текст

Издание

Журнал: 2017 International Siberian Conference on Control and Communications, SIBCON 2017 - Proceedings

Номера страниц: 7998519

Издатель: Institute of Electrical and Electronics Engineers Inc.

Авторы

  • Sidaras A. (Institute of Space and Information Technologies,Siberian Federal University)
  • Noskova E. (Institute of Space and Information Technologies,Siberian Federal University)
  • Kapulin D. (Institute of Space and Information Technologies,Siberian Federal University)

Вхождение в базы данных

Информация о публикациях загружается с сайта службы поддержки публикационной активности СФУ. Сообщите, если заметили неточности.

Вы можете отметить интересные фрагменты текста, которые будут доступны по уникальной ссылке в адресной строке браузера.