Features of the structure and properties of beta-FeSi2 nanofilms and a beta-FeSi2/Si interface

Тип публикации: статья из журнала

Год издания: 2012

Идентификатор DOI: 10.1134/S0021364012010055

Аннотация: The electronic, geometric, and magnetic structure of nanofilms of the beta phase of iron disilicide FeSi2 with the (001), (100), and (010) surfaces have been simulated through density functional calculations. A substantial reconstruction of the (001) surface terminated with silicon atoms has been observed, which was accompanied by an increase in the surface symmetry and appearance of "squares" of silicon atoms. Analysis of the electron density of states (DOS) and spin DOS projected on the contributions of layers of atoms (LSDOS) indicates that all plates have metallic properties. The main contribution near the Fermi level comes from the surface iron layers and it decreases rapidly with an increase in the distance from the surface of the plate. Analysis of the calculated effective magnetic moments of atoms shows that the surface layers in the plates have a significant magnetic moment, in particular, iron layers on the (001) surface (1.89 mu(B)/atom). The moments of atoms decrease rapidly with an increase in their distance from the surface. The electron and geometric regions of a (001)Si/FeSi2 interface have been studied. Analysis of the LSDOS shows that the surface conducting state mainly determined by the contribution from the near-surface silicide layers is implemented in this region. The possibility of the formation of the perfect and sharp Si/FeSi2 interface has been demonstrated.

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Издание

Журнал: JETP LETTERS

Выпуск журнала: Vol. 95, Is. 1

Номера страниц: 20-24

ISSN журнала: 00213640

Место издания: NEW YORK

Издатель: MAIK NAUKA/INTERPERIODICA/SPRINGER

Авторы

  • Fedorov A.S. (Kirensky Institute of Physics, Siberian Branch,Russian Academy of Sciences)
  • Ovchinnikov S.G. (Siberian Federal University)
  • Kuzubov A.A. (Siberian Federal University)
  • Kozhevnikova T.A. (Siberian Federal University)
  • Eliseeva N.S. (Siberian Federal University)
  • Galkin N.G. (Institute of Automation and Control Processes, Far East Branch,Russian Academy of Sciences)
  • Saranin A.A. (Institute of Automation and Control Processes, Far East Branch,Russian Academy of Sciences)
  • Latyshev A.V. (Rzhanov Institute of Semiconductor Physics, Siberian Branch,Russian Academy of Sciences)

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