Тип публикации: статья из журнала
Год издания: 2011
Идентификатор DOI: 10.1134/S2075113311010060
Ключевые слова: Composite film, Fullerene, Photo-emf, Electrical resistances, Optical radiations, Oxide composites, Sensor electronics, Tungsten oxide, Visible and ultraviolet, Fullerenes, Oxide films, Oxides, Tungsten, Tungsten compounds, Ultraviolet radiation, Composite films
Аннотация: In this work, the dependences of electrical resistance on temperature and visible and ultraviolet radiation are given for fullerene-tungsten oxide composite films. It is established that the films are semiconductors and their conductivity is substantially higher than that for films from pure fullerene. The possibility of using these composite films in sensor electronics is demonstrated. © 2011 Pleiades Publishing, Ltd.
Издание
Журнал: Inorganic Materials: Applied Research
Выпуск журнала: Vol. 2, Is. 1
Номера страниц: 22-24
Персоны
- Dudnik A.I. (Russian Academy of Sciences, Kirenskii Institute of Physics; Siberian Federal University, Krasnoyarsk, Russian Federation)
- Il'ina A.O. (Russian Academy of Sciences, Kirenskii Institute of Physics; Siberian Federal University, Krasnoyarsk, Russian Federation)
- Seredkin V.A. (Russian Academy of Sciences, Kirenskii Institute of Physics; Siberian Federal University, Krasnoyarsk, Russian Federation)
- Glushchenko G.A. (Russian Academy of Sciences, Kirenskii Institute of Physics; Siberian Federal University, Krasnoyarsk, Russian Federation)
Вхождение в базы данных
- Scopus
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