Synthesis of Nanosized Titanium Oxide and Nitride Through Vacuum Arc Plasma Expansion Technique

Тип публикации: статья из журнала

Год издания: 2016

Идентификатор DOI: 10.1142/S0219581X15500271

Ключевые слова: Nanoparticles, vacuum arc, TEM micrograph, X-ray analysis, Nanoparticles, TEM micrograph, Vacuum arc, X-ray analysis, Deposition, Film preparation, Nanocrystals, Nanoparticles, Nitrides, Particle size, Physical vapor deposition, Synthesis (chemical), Thermal evaporation, Thin films, Titanium, Titanium dioxide, Titanium nitride, Titanium oxides, Transmission electron microscopy, Vacuum applications, Vacuum technology, X ray analysis, Average particle size, Gas condensation method, High specific surface area, Nanocrystalline thin films, Nitride nanoparticles, TEM micrographs, Vacuum arcs, Vapor-deposition techniques, Vapor deposition

Аннотация: Physical vapor deposition techniques such vacuum arc plasma deposition - which are very commonly used in thin film technology - appear to hold much promise for the synthesis of nanocrystalline thin films as well as nanoparticles. Monodisperse and spherical titanium oxide (TiO2) and nitride nanoparticles were produced at room temperature as a cluster beam in the gas phase using a cluster-deposition source. Using the basic principles of the gas condensation method, this study has developed vacuum arc nanoparticle synthesis system. We demonstrate that major process deposition parameter is the pressure in the plasma chamber. This is the major advantage of these techniques over thermal evaporation. Our method affords TiN powders with high specific surface areas exceeding 200 m(2) g(-1). TEM micrograph of TiO2 nanoparticles prepared at an oxygen pressure of 60 Pa show an average particle size of 6 nm. TiO2 nanoparticles prepared at an oxygen pressure of 70 Pa were observed to not have a reduced average particle size.

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Издание

Журнал: INTERNATIONAL JOURNAL OF NANOSCIENCE

Выпуск журнала: Vol. 15, Is. 01.02.2017

ISSN журнала: 0219581X

Место издания: SINGAPORE

Издатель: WORLD SCIENTIFIC PUBL CO PTE LTD

Авторы

  • Lepeshev A.A. (Siberian Fed Univ, Dept UNESCO, Krasnoyarsk 660041, Russia)
  • Karpov I.V. (Siberian Fed Univ, Dept UNESCO, Krasnoyarsk 660041, Russia)
  • Ushakov A.V. (Siberian Fed Univ, Dept UNESCO, Krasnoyarsk 660041, Russia)
  • Fedorov L.Yu. (Siberian Fed Univ, Dept UNESCO, Krasnoyarsk 660041, Russia)
  • Shaihadinov A.A. (Siberian Fed Univ, Dept Mech Engn, Krasnoyarsk 660041, Russia)

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