Peculiarity of interrelation between electronic and magnetic properties of HTSC cuprates associated with short-range antiferromagnetic order

Тип публикации: статья из журнала

Год издания: 2010

Идентификатор DOI: 10.1134/S1063776110070101

Ключевые слова: Anisotropic resistivity, Antiferromagnetic orders, Concentration dependence, Cuprates, Doping levels, Electronic and magnetic properties, Fermi surface topology, High temperature superconducting, Magnetic orders, Magnetic state, Maximum values, Pseudo-gap, Short-range magnetic orders, Strong electron correlations, Temperature dependence, Anisotropy, Antiferromagnetic materials, Antiferromagnetism, Copper compounds, Correlators, Electronic properties, High temperature superconductors, Hole concentration, Magnetic properties, Neon, Superconducting magnets, Single crystals

Аннотация: We report on the results of measurements of anisotropic resistivity of RBa(2)Cu(3)O(6 + x) (R = Tm, Lu) high-temperature superconducting single crystals in a wide range of doping levels, indicating a nontrivial effect of magnetic order on the electronic properties of cuprates. In particular, our results visually demonstrate the crossover from the state with moderate anisotropy of resistivity rho (c) /rho (ab) similar to 30 to a strongly anisotropic state with rho (c) /rho (ab) similar to 7 x 10(3) upon cooling as well as upon a decrease in the hole concentration in the CuO(2) planes. It is also shown that anisotropy is sensitive to the magnetic state of CuO(2) planes and attains its maximum value after the establishment of the long-range antiferromagnetic order. The results are discussed in the framework of the theory based on the t-t'-taEuro(3)-J model of CuO(2) layers taking into account strong electron correlations and short-range magnetic order. In this theory, anomalies of spin correlators and Fermi surface topology for a critical hole concentration of p* a parts per thousand 0.24 are demonstrated. The concentration dependence of the charge carrier energy indicates partial suppression of energy due to the emergence of a pseudogap at p

Ссылки на полный текст



Выпуск журнала: Vol. 111, Is. 1

Номера страниц: 104-113

ISSN журнала: 10637761

Место издания: NEW YORK



  • Ovchinnikov S.G. (Siberian Federal University)
  • Korshunov M.M. (Department of Physics,University of Florida)
  • Kozeeva L.P. (Nikolaev Institute of Inorganic Chemistry,Siberian Branch,Russian Academy of Sciences)
  • Lavrov A.N. (Nikolaev Institute of Inorganic Chemistry,Siberian Branch,Russian Academy of Sciences)

Вхождение в базы данных

Информация о публикациях загружается с сайта службы поддержки публикационной активности СФУ. Сообщите, если заметили неточности.

Вы можете отметить интересные фрагменты текста, которые будут доступны по уникальной ссылке в адресной строке браузера.