Тип публикации: статья из журнала
Год издания: 2017
Идентификатор DOI: 10.17516/1997-1397-2017-10-4-399-409
Ключевые слова: Autowave oxidation, In2O3 thin films, Photoconductance
Аннотация: The influences of ultraviolet (UV) irradiation and temperature on the electrical and optical properties in In2O3 films obtained by autowave oxidation were measured experimentally. The film resistance changed slightly for temperatures from 300 to 95 K, and more noticeably when the temperature was further de- creased, measured in the dark. Under UV irradiation, the resistivity of the films at room temperature decreased sharply by ~25% and from 300 to 95 K, and continued to decrease by ~38% with a further decreasing temperature. When the UV source was turned off, the resistivity relaxed at a rate of 15 Ω/s for the first 30 seconds and 7 Ω/s for the remaining time. The transmittance decreased by 3.1% at a wavelength of 6.3 µm after the irradiation ceased. The velocity of the relaxation transmittance was 0.006 %/s. The relaxation of the electrical resistance and transmittance after UV irradiation termination were similar. It was assumed that the dominant mechanism responsible for the change in the conductivity in the indium oxide films during UV irradiation was photoreduction. © Siberian Federal University. All rights reserved.
Журнал: Journal of Siberian Federal University - Mathematics and Physics
Выпуск журнала: Vol. 10, Is. 4
Номера страниц: 399-409
ISSN журнала: 19971397
Издатель: Siberian Federal University
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