Сибирский федеральный университет

Тип публикации: статья из журнала

Год издания: 2008

Ключевые слова: Elemental semiconductors, ferromagnetic materials, Interface magnetism, iron, Magnetisation, Multilayers, silicon

Аннотация: The magnetization of Fe/Si multilayers, grown by thermal evaporation in an ultrahigh vacuum system, was investigated at high temperatures. Magnetization and its temperature dependence up to a high temperature of 800 K depend on individual Fe layer thickness formuladromanFe/roman/formula. This dependence is the result of the formation of an Fe-Si interface layer (nonmagnetic phase) during the synthetic procedure. The fraction of this Fe-Si nonmagnetic phase is estimated versus formuladromanFe/roman/formula. At temperatures higher than 400 K an irreversible decrease in the magnetization occurs. A quantitative analysis of this irreversible behavior is proposed in terms of an exponential diffusion-like kinetic equation for the reaction that produces the Fe-Si nonmagnetic phase. The coefficients of the rate equation are the activation energy formulaEa/formula and the prefactor formulaD0/formula, which have been determined for different formuladromanFe/roman/formula.

Журнал: Journal of Applied Physics

Выпуск журнала: Т. 104, № 9

Номера страниц: 094703

ISSN журнала: 00218979

Издатель: American Institute of Physics

• Varnakov S.N.
• Komogortsev S.V.
• Ovchinnikov S.G.
• Bartolome' J.
• Sese' J.

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